IXBF32N300
Single IGBTs
Manufacturer
MPN
IXBF32N300
Product Type
Package / Case
ISOPLUSi4-PAK
Datasheet
Key Attributes
High Voltage, High Gain Bipolar Mos Transistor
Technical Specifications
| Type | Description |
|---|---|
| Td(Off) | 160ns |
| Td(On) | 50ns |
| Current - Collector(Ic) | 40A |
| Collector-Emitter Breakdown Voltage (Vces) | 3kV |
| Reverse Transfer Capacitance (Cres) | 40pF |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Vce Saturation(VCE(sat)) | 3.2V@32A,15V |
| Collector Cut-Off Current (Ices) | - |
| Type | Description |
|---|---|
| Switching Energy(Eoff) | - |
| Turn-On Energy (Eon) | - |
| Input Capacitance(Cies) | 3.14nF |
| Output Capacitance(Coes) | 124pF |
| Pd W | 160 W |
| Operating Temp | -55°C ~ +150°C |
| Trr Ns | 1.5 |
| Gate Charge C | 142.0 |
| Package / Case | ISOPLUSi4-PAK |
Product Introduction
160W 40A 3kV ISOPLUSi4-PAK Single IGBTs RoHS
Features
- Silicon Chip on Direct-Copper Bond (DCB) Substrate
- Isolated Mounting Surface
- 3000V Electrical Isolation
- High Blocking Voltage
- International Standard Package
- Low Conduction Losses
- Low Gate Drive Requirement
- High Power Density
Applications
- - Switched-Mode and Resonant-Mode Power Supplies - Uninterruptible Power Supplies (UPS) - Laser Generators - Capacitor Discharge Circuits - AC Switches
Datasheet
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Sourcing Information
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