Infineon Technologies

ISC046N13NM6ATMA1

Transistors (BJT/MOSFET)

Manufacturer
Infineon Technologies
MPN
ISC046N13NM6ATMA1
Product Type
Semiconductors & Discrete
Package / Case
PG-TDSON-8
Datasheet
ISC046N13NM6ATMA1 Datasheet
Key Attributes
Number: 1 N-channel
Type: N-Channel
Drain to Source Voltage: 135V
Current - Continuous Drain(Id): 142A
Pd - Power Dissipation: 211W
Gate Threshold Voltage (Vgs(th)): 3V
RDS(on): 3.7mΩ@15V

Technical Specifications

TypeDescription
Drain-Source Voltage135 V
Continuous Drain Current142 A
Chan TypeN-Channel
Pd W211 W
Gate Charge C65 nC
Output Capacitance(Coss)880pF
Configuration-
Gate Threshold Voltage (Vgs(th))3V
TypeDescription
Reverse Transfer Capacitance (Crss@Vds)14pF
Number1 N-channel
Input Capacitance(Ciss)4.4nF
Vgs±20V
Operating Temperature-55°C~+175°C
Rds On Ohm3.7mOhm@15V
TypeN-Channel
Package / CasePG-TDSON-8

Datasheet

📄 Open Download

Alternative Parts

Common ISC046N13NM6ATMA1 alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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