IRLZ44NPBF
Transistors (BJT/MOSFET)
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 55 V |
| Continuous Drain Current | 47 A |
| Chan Type | N-Channel |
| Pd W | 110 W |
| Output Capacitance(Coss) | 400pF |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF |
| Type | Description |
|---|---|
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.7nF |
| Vgs | ±16V |
| Operating Temperature | -55°C~+175°C |
| Rds On Ohm | 25mOhm@5V |
| Gate Charge C | 48nC@5V |
| Type | N-Channel |
| Package / Case | TO-220AB |
Product Introduction
The 5th Generation HEXFET utilizes advanced process technology to achieve the lowest possible on-resistance per unit silicon area. This advantage, combined with the well-known fast switching speed and rugged device design of HEXFET power MOSFETs, provides designers with an extremely efficient device suitable for a wide range of applications.
The TO-220 package is widely preferred across all commercial-industrial applications at power dissipation levels up to approximately 50 watts. Its low thermal resistance and low package cost have made it broadly accepted throughout the industry.
Features
- Logic-level gate drive
- Advanced process technology
- Dynamic dv/dt rating
- 175°C operating temperature
- Fast switching
- Fully avalanche rated
- Lead-free
Datasheet
Alternative Parts
Common IRLZ44NPBF alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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