Infineon Technologies

IRLML6402TRPBF

Single FETs, MOSFETs

MPN
IRLML6402TRPBF
Package / Case
SOT-23
Key Attributes
MOSFET P-CH 20V 3.7A SOT-23

Technical Specifications

TypeDescription
Drain-Source Voltage20 V
Continuous Drain Current3.7 A
Chan TypeP-Channel
Pd W1.3 W
Rds On Ohm0.065 Ω
Gate Charge C12.0
Configuration-
Gate Threshold Voltage (Vgs(th))1.2V
TypeDescription
Reverse Transfer Capacitance (Crss@Vds)110pF
Number1 P-Channel
Input Capacitance(Ciss)633pF
Vgs+/-12V
Output Cap Coss1.45e-10
Operating Temp-55°C ~ +150°C
TypeP-Channel
Package / CaseSOT-23

Product Introduction

These P-Channel MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.

A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1 mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMClA cards. The thermal resistance and power dissipation are the best available.

Features

  • Ultra Low On-Resistance
  • Fast Switching
  • Low Profile (<1.1 mm)
  • Available in Tape and Reel
  • Lead-Free
  • RoHS Compliant, Halogen-Free

Applications

  • - battery and load management - portable electronics - PCMClA cards

Datasheet

📄 Open Download

Alternative Parts

Common IRLML6402TRPBF alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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