Infineon Technologies

IRLML2803TRPBF

Single FETs, MOSFETs

MPN
IRLML2803TRPBF
Package / Case
SOT-23
Key Attributes
MOSFET N-CH 30V 1.2A SOT-23

Technical Specifications

TypeDescription
Drain-Source Voltage30 V
Continuous Drain Current1.2 A
Chan TypeN-Channel
Pd W0.54 W
Rds On Ohm0.25 Ω
Gate Charge C5.0
Configuration-
Gate Threshold Voltage (Vgs(th))400mV
TypeDescription
Reverse Transfer Capacitance (Crss@Vds)15pF
Number1 N-channel
Input Capacitance(Ciss)85pF
Vgs+/-20V
Output Cap Coss3.4e-11
Operating Temp-55°C ~ +150°C
TypeN-Channel
Package / CaseSOT-23

Product Introduction

Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

A customized leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMClA cards.

Features

  • Generation V Technology
  • Ultra Low On-Resistance
  • N-Channel MOSFET
  • SOT-23 Footprint
  • Low Profile (<1.1mm)
  • Available in Tape and Reel
  • Fast Switching
  • Lead-Free
  • RoHS Compliant, Halogen-Free

Datasheet

📄 Open Download

Alternative Parts

Common IRLML2803TRPBF alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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