IRFR5305TRPBF
Single FETs, MOSFETs
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 55 V |
| Continuous Drain Current | 31 A |
| Chan Type | P-Channel |
| Pd W | 110 W |
| Rds On Ohm | 0.065 Ω |
| Gate Charge C | 63.0 |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 250pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.2nF |
| Vgs | +/-20V |
| Output Cap Coss | 5.2e-10 |
| Operating Temp | -55°C ~ +175°C |
| Type | P-Channel |
| Package / Case | DPAK |
Product Introduction
Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Features
- Ultra Low On-Resistance
- Surface Mount (IRFR5305)
- Straight Lead (IRFU5305)
- Advanced Process Technology
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
Datasheet
Alternative Parts
Common IRFR5305TRPBF alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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