Infineon Technologies

IRFB4115PBF

Transistors (BJT/MOSFET)

MPN
IRFB4115PBF
Package / Case
TO-220
Key Attributes
MOSFET N-CH 150V 104A TO-220

Technical Specifications

TypeDescription
Drain-Source Voltage150 V
Continuous Drain Current104 A
Chan TypeN-Channel
Pd W380 W
Output Capacitance(Coss)490pF
Configuration-
Gate Threshold Voltage (Vgs(th))5V
Reverse Transfer Capacitance (Crss@Vds)105pF
TypeDescription
Number1 N-channel
Input Capacitance(Ciss)5.27nF
Vgs±20V
Operating Temperature-55°C~+175°C
Rds On Ohm11mOhm@10V
Gate Charge C120nC@10V
TypeN-Channel
Package / CaseTO-220

Features

  • Improved Gate, Avalanche and Dynamic dv/dt
  • Ruggedness
  • Fully Characterized Capacitance and Avalanche
  • SOA
  • Enhanced body diode dV/dt and dl/dt Capability
  • LeadFree
  • RoHS Compliant, Halogen-Free

Applications

  • High Efficiency Synchronous Rectification in SMPS
  • UninterruptiblePower Supply
  • High Speed Power Switching
  • Hard Switched and High Frequency Circuits

Datasheet

📄 Open Download

Alternative Parts

Common IRFB4115PBF alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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