Infineon Technologies

IRFB4110PBF

Single FETs, MOSFETs

MPN
IRFB4110PBF
Package / Case
TO-220
Key Attributes
MOSFET N-CH 100V 180A TO-220

Technical Specifications

TypeDescription
Drain-Source Voltage100 V
Continuous Drain Current180 A
Chan TypeN-Channel
Pd W370 W
Rds On Ohm0.004 Ω
Gate Charge C210.0
Configuration-
Gate Threshold Voltage (Vgs(th))4V
TypeDescription
Reverse Transfer Capacitance (Crss@Vds)250pF
Number1 N-channel
Input Capacitance(Ciss)9.62nF
Vgs+/-20V
Output Cap Coss6.7e-10
Operating Temp-55°C ~ +175°C
TypeN-Channel
Package / CaseTO-220

Product Introduction

N-Channel 100V 180A 370W Through Hole TO-220

Features

  • Improved Gate, Avalanche and Dynamic dv/dt
  • Ruggedness
  • Fully Characterized Capacitance and Avalanche
  • SOA
  • Enhanced body diode dV/dt and dl/dt Capability
  • LeadFree
  • RoHS Compliant, Halogen-Free

Applications

  • - High Efficiency Synchronous Rectification in SMPS - Uninterruptible Power Supply - High Speed Power Switching - Hard Switched and High Frequency Circuits

Datasheet

📄 Open Download

Alternative Parts

Common IRFB4110PBF alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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