Infineon Technologies

IRFB3206PBF

Transistors (BJT/MOSFET)

Manufacturer
Infineon Technologies
MPN
IRFB3206PBF
Product Type
Semiconductors & Discrete
Package / Case
TO-220AB
Datasheet
IRFB3206PBF Datasheet
Key Attributes
MOSFET N-CH 60V 210A TO-220AB

Technical Specifications

TypeDescription
Drain-Source Voltage60 V
Continuous Drain Current210 A
Chan TypeN-Channel
Pd W300 W
Output Capacitance(Coss)720pF
Configuration-
Gate Threshold Voltage (Vgs(th))4V
Reverse Transfer Capacitance (Crss@Vds)360pF
TypeDescription
Number1 N-channel
Input Capacitance(Ciss)6.54nF
Vgs±20V
Operating Temperature-55°C~+175°C
Rds On Ohm3mOhm@10V
Gate Charge C170nC@10V
TypeN-Channel
Package / CaseTO-220AB

Features

  • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
  • Fully Characterized Capacitance and Avalanche SoA
  • Enhanced body diode dV/dt and dl/dt Capability
  • Lead-Free
  • RoHS Compliant, Halogen-Free

Applications

  • High Efficiency Synchronous Rectification in SMPS
  • Uninterruptible Power Supply
  • High Speed Power Switching
  • Hard Switched and High Frequency Circuits

Datasheet

📄 Open Download

Alternative Parts

Common IRFB3206PBF alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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