Slkor

IRF640

Transistors (BJT/MOSFET)

Manufacturer
SlkorAsian Brands
MPN
IRF640
Package / Case
TO-220
Key Attributes
MOSFET N-CH 200V 18A TO-220

Technical Specifications

TypeDescription
Drain-Source Voltage200 V
Continuous Drain Current18 A
Chan TypeN-Channel
Pd W150 W
Output Capacitance(Coss)-
Configuration-
Gate Threshold Voltage (Vgs(th))4V
Reverse Transfer Capacitance (Crss@Vds)-
TypeDescription
Number1 N-channel
Input Capacitance(Ciss)-
Vgs±20V
Operating Temperature-55°C~+175°C
Rds On Ohm150mOhm@10V
Gate Charge C-
TypeN-Channel
Package / CaseTO-220

Product Introduction

High-efficiency, reliable devices for a wide range of applications

Features

  • Static drain-source on-resistance: RDS(on) ≤ 150 mΩ
  • Enhancement mode
  • Fast switching speed
  • 100% avalanche tested
  • Minimal lot-to-lot variation for consistent device performance and reliable operation

Applications

  • Battery protection
  • Load switch

Datasheet

📄 Open Download

Compliance & Export Codes

TypeDetails
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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