IRF5210STRLPBF
Single FETs, MOSFETs
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 100 V |
| Continuous Drain Current | 38 A |
| Chan Type | P-Channel |
| Pd W | 170 W |
| Rds On Ohm | 0.06 Ω |
| Gate Charge C | 230.0 |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 430pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.78nF |
| Vgs | +/-20V |
| Output Cap Coss | 8e-10 |
| Operating Temp | -55°C ~ +150°C |
| Type | P-Channel |
| Package / Case | D2PAK |
Product Introduction
Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications.
Features
- Advanced Process Technology
- Ultra Low On-Resistance
- 150°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- P-Channel
- Lead-Free
Datasheet
Alternative Parts
Common IRF5210STRLPBF alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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