Infineon Technologies

IRF3710PBF

Single FETs, MOSFETs

MPN
IRF3710PBF
Package / Case
TO-220AB
Key Attributes
MOSFET N-CH 100V 57A TO-220AB

Technical Specifications

TypeDescription
Drain-Source Voltage100 V
Continuous Drain Current57 A
Chan TypeN-Channel
Pd W200 W
Rds On Ohm0.023 Ω
Gate Charge C130.0
Gate Threshold Voltage (Vgs(th))4V
TypeDescription
Reverse Transfer Capacitance (Crss@Vds)72pF
Number1 N-channel
Input Capacitance(Ciss)3.13nF
Operating Temp-55°C ~ +175°C
Output Cap Coss4.1e-10
TypeN-Channel
Package / CaseTO-220AB

Product Introduction

Advanced HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Features

  • Advanced Process Technology
  • Ultra Low On-Resistance
  • Dynamic dv/dt Rating
  • 175℃ Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated
  • Lead-Free

Datasheet

📄 Open Download

Alternative Parts

Common IRF3710PBF alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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