IPW65R070C6FKSA1
Transistors (BJT/MOSFET)
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 650 V |
| Continuous Drain Current | 53.5 A |
| Chan Type | N-Channel |
| Pd W | 391 W |
| Output Capacitance(Coss) | 215pF |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Type | Description |
|---|---|
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.9nF |
| Vgs | ±20V |
| Operating Temperature | -55°C~+150°C |
| Rds On Ohm | 70mOhm@10V |
| Gate Charge C | 170nC@10V |
| Type | N-Channel |
| Package / Case | TO-247-3-1 |
Product Introduction
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Features
- Extremely low losses due to very low FOM Rdson * Q₉ and Eoss
- Very high commutation ruggedness
- Easy to use/drive
- Qualified for industrial grade applications according to JEDEC
- Pb-free plating, Halogen free mold compound
Applications
- PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, LCD & PDP TV, Lighting, Server, Telecom, UPS and Solar.
Datasheet
Alternative Parts
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Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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