Infineon Technologies

IPW60R060P7

Single FETs, MOSFETs

MPN
IPW60R060P7
Package / Case
TO-247-3
Key Attributes
MOSFET N-CH 600V 30A TO-247-3

Technical Specifications

TypeDescription
Drain-Source Voltage600 V
Continuous Drain Current30 A
Chan TypeN-Channel
Pd W164 W
Rds On Ohm0.06 Ω
Gate Charge C67.0
Configuration-
Gate Threshold Voltage (Vgs(th))3.5V
TypeDescription
Reverse Transfer Capacitance (Crss@Vds)-
Number1 N-channel
Input Capacitance(Ciss)2.895nF
Vgs+/-20V
Output Cap Coss4.8e-11
Operating Temp-55°C ~ +150°C
TypeN-Channel
Package / CaseTO-247-3

Product Introduction

The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching applications even more efficient, more compact and much cooler.

Features

  • Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness
  • Significant reduction of switching and conduction losses
  • Excellent ESD robustness ~2kV (HBM) for all products
  • Better RDS(on)/package products compared to competition enabled by a low RDS(on)*A (below 1Ohm*mm²)
  • Fully qualified acc. JEDEC for Industrial Applications

Applications

  • - PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS.

Datasheet

📄 Open Download

Alternative Parts

Common IPW60R060P7 alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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