Infineon Technologies

IPT015N10N5

Single FETs, MOSFETs

MPN
IPT015N10N5
Package / Case
HSOF-8
Key Attributes
MOSFET N-CH 100V 300A HSOF-8

Technical Specifications

TypeDescription
Drain-Source Voltage100 V
Continuous Drain Current300 A
Chan TypeN-Channel
Pd W375 W
Rds On Ohm0.002 Ω
Gate Charge C211.0
Configuration-
Gate Threshold Voltage (Vgs(th))3.8V
TypeDescription
Reverse Transfer Capacitance (Crss@Vds)140pF
Number1 N-channel
Input Capacitance(Ciss)16nF
Vgs+/-20V
Output Cap Coss2.3e-09
Operating Temp-55°C ~ +175°C
TypeN-Channel
Package / CaseHSOF-8

Product Introduction

BLM4435 utilizes advanced trench technology to deliver excellent on-state drain-source resistance (RDS(ON)), low gate charge, and operation at gate voltages as low as 4.5V.

Features

  • Ideal for high frequency switching and sync. rec.
  • Excellent gate charge x RDS(on) product (FOM)
  • Very low on-resistance RDS(on)
  • N-channel, normal level
  • 100% avalanche tested
  • Pb-free plating; RoHS compliant
  • Qualified according to JEDEC1) for target applications
  • Halogen-free according to IEC61249-2-21

Applications

  • - Battery switch - Load switch - Power management

Datasheet

📄 Open Download

Alternative Parts

Common IPT015N10N5 alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

Sourcing IPT015N10N5 from China? SZ Procure helps international buyers navigate the Shenzhen electronics market and locate suitable supplier options for specific component requirements.

For IPT015N10N5, we can check current supplier availability, compare quotations from multiple sources, coordinate purchasing, and arrange pre-shipment inspection and shipment consolidation according to your requirements.

Need IPT015N10N5? Send us your required quantity and specifications for a sourcing check and quotation.