IPD068N10N3G
Single FETs, MOSFETs
Manufacturer
MPN
IPD068N10N3G
Product Type
Package / Case
TO-252-3
Datasheet
Key Attributes
MOSFET N-CH 100V 90A TO-252-3
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 100 V |
| Continuous Drain Current | 90 A |
| Chan Type | N-Channel |
| Pd W | 150 W |
| Rds On Ohm | 0.007 Ω |
| Gate Charge C | 51.0 |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.69nF |
| Vgs | +/-20V |
| Output Cap Coss | 6.459999999999999e-10 |
| Operating Temp | -55°C ~ +175°C |
| Type | N-Channel |
| Package / Case | TO-252-3 |
Product Introduction
N-Channel 100V 90A 150W Surface Mount TO-252-3
Features
- N-channel, normal level
- Excellent gate charge x RDS(on) product (FOM)
- Very low on-resistance RDS(on)
- 175 ℃ operating temperature
- Pb-free lead plating; RoHS compliant
- Qualified according to JEDEC for target application
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free according to IEC61249-2-21
Datasheet
Alternative Parts
Common IPD068N10N3G alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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