IPB65R190CFD
Single FETs, MOSFETs
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 650 V |
| Continuous Drain Current | 17.5 A |
| Chan Type | N-Channel |
| Rds On Ohm | 0.171 Ω |
| Gate Charge C | 68.0 |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Type | Description |
|---|---|
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.85nF |
| Vgs | +/-20V |
| Output Cap Coss | 8.6e-11 |
| Pd W | - |
| Operating Temp | -55°C ~ +150°C |
| Type | N-Channel |
| Package / Case | TO-263 |
Product Introduction
CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. 650V CoolMOS CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode. This combination of extremely low switching, commutation and conduction losses together with highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler.
Features
- Ultra-fast body diode
- Very high commutation ruggedness
- Extremely low losses due to very low FOM Rdson*Qg and Eoss
- Easy to use/drive
- Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)
- Pb-free plating, Halogen free mold compound
Applications
- - 650V CoolMOS CFD2 is especially suitable for resonant switching PWM stages for e.g. PC Silverbox, LCD TV, Lighting, Server and Telecom.
Datasheet
Alternative Parts
Common IPB65R190CFD alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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