IPB117N20NFDATMA1
Transistors (BJT/MOSFET)
Manufacturer
MPN
IPB117N20NFDATMA1
Product Type
Package / Case
TO-263
Datasheet
Key Attributes
MOSFET N-CH 200V 84A TO-263
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 200 V |
| Continuous Drain Current | 84 A |
| Chan Type | N-Channel |
| Pd W | 300 W |
| Output Capacitance(Coss) | 532pF |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF |
| Type | Description |
|---|---|
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.65nF |
| Vgs | ±20V |
| Operating Temperature | -55°C~+175°C |
| Rds On Ohm | 11.7mOhm@10V |
| Gate Charge C | 87nC@10V |
| Type | N-Channel |
| Package / Case | TO-263 |
Features
- N-channel, normal level
- Fast Diode (FD) with reduced Qrr
- Optimized for hard commutation ruggedness
- Very low on-resistance RDS(on)
- 175 °C operating temperature
- Pb-free lead plating; RoHS compliant
- Qualified according to JEDEC for target application
- Halogen-free according to IEC61249-2-21
Datasheet
Alternative Parts
Common IPB117N20NFDATMA1 alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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