Infineon Technologies

IPB017N10N5

Single FETs, MOSFETs

MPN
IPB017N10N5
Package / Case
TO-263-7

Technical Specifications

TypeDescription
Drain-Source Voltage100 V
Continuous Drain Current180 A
Chan TypeN-Channel
Pd W375 W
Rds On Ohm0.002 Ω
Gate Charge C168.0
Configuration-
Gate Threshold Voltage (Vgs(th))3.8V
TypeDescription
Reverse Transfer Capacitance (Crss@Vds)140pF
Number1 N-channel
Input Capacitance(Ciss)15.6nF
Vgs+/-20V
Output Cap Coss1.8100000000000002e-09
Operating Temp-55°C ~ +175°C
TypeN-Channel
Package / CaseTO-263-7

Product Introduction

375W 100V 180A 3.8V 1.7mΩ@10V 1 N-channel N-Channel TO-263-7 Single FETs, MOSFETs RoHS

Features

  • Suitable for high-frequency switching and synchronous rectification
  • Excellent gate charge × R<sub>DS(ON)</sub> figure of merit (FOM)
  • Ultra-low on-resistance R<sub>DS(ON)</sub>
  • N-channel, normally-on
  • 100% avalanche tested
  • Lead-free plating; RoHS compliant
  • JEDEC qualified for target applications
  • Halogen-free per IEC61249-2-21

Datasheet

📄 Open Download

Alternative Parts

Common IPB017N10N5 alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCN-
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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