IMZA120R007M1HXKSA1
Manufacturer
MPN
IMZA120R007M1HXKSA1
Product Type
Unmapped
Package / Case
TO-247-4
Datasheet
Key Attributes
Number: 1 N-channel
Type: N-Channel
Drain to Source Voltage: 1.2kV
Current - Continuous Drain(Id): 225A
Pd - Power Dissipation: 750W
Gate Threshold Voltage (Vgs(th)): 3.6V
RDS(on): 7mΩ@18V
Type: N-Channel
Drain to Source Voltage: 1.2kV
Current - Continuous Drain(Id): 225A
Pd - Power Dissipation: 750W
Gate Threshold Voltage (Vgs(th)): 3.6V
RDS(on): 7mΩ@18V
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 1.2 V |
| Continuous Drain Current | 225 A |
| Chan Type | N-Channel |
| Pd W | 750 W |
| Gate Charge C | 289 nC |
| Configuration | - |
| Output Capacitance(Coss) | 61pF |
| Gate Threshold Voltage (Vgs(th)) | 3.6V |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 420pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.17nF |
| Operating Temperature | -55°C~+175°C |
| Rds On Ohm | 7mOhm@18V |
| Type | N-Channel |
| Package / Case | TO-247-4 |
Product Introduction
1 - Drain
2 - Source
3 - Kelvin sense contact
4 - Gate
Note: Source and sense pins are not interchangeable; swapping may cause malfunction (applicable to 4-pin, TO263-7L package only)
Features
- V_DSS = 1200 V at Tvj = 25°C
- IDDC = 225 A at Tc = 25°C
- R_DS(on) = 7 mΩ at V_GS = 18 V, Tvj = 25°C
- Ultra-low switching losses
- Defined gate threshold voltage, V_GS(th) = 4.2 V
- High robustness against parasitic turn-on, compatible with 0 V or negative gate turn-off voltage
- Rugged body diode for hard commutation
- Best-in-class thermal performance with .XT interconnection technology
Applications
- General Purpose Drive (GPD)
- EV Charging
- Online UPS/Industrial UPS
- String Inverter
- Solar Power Optimizer
Datasheet
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
Sourcing Information
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