Infineon Technologies

IKW75N65EH5

Single IGBTs

MPN
IKW75N65EH5
Product Type
Package / Case
TO-247-3
Key Attributes
High speed series fifth generation High speed 5 IGBT in TRENCHSTOP 5 technology copacked with full-rated RAPiD 1 fast and soft antiparallel diode

Technical Specifications

TypeDescription
Pd W395 W
Operating Temp-40°C ~ +175°C
Trr Ns92.0
Gate Charge C160.0
Td(Off)174ns
Td(On)28ns
Current - Collector(Ic)90A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)17pF
TypeDescription
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.2V@0.75mA
Vce Saturation(VCE(sat))2.1V@75A,15V
Collector Cut-Off Current (Ices)-
Switching Energy(Eoff)900uJ
Turn-On Energy (Eon)2.3mJ
Input Capacitance(Cies)4.2nF
Output Capacitance(Coes)130pF
Package / CaseTO-247-3

Product Introduction

395W 90A 650V TO-247-3 Single IGBTs RoHS

Features

  • High speed H5 technology offering
  • Best-in-Class efficiency in hard switching and resonant topologies
  • Plug and play replacement of previous generation IGBTs
  • 650V breakdown voltage
  • Low gate charge QG
  • IGBT copacked with full-rated RAPID 1 fast and soft antiparallel diode
  • Maximum junction temperature 175℃
  • Qualified according to JEDEC for target applications
  • Pb-free lead plating; RoHS compliant
  • Complete product spectrum and PSpice Models

Applications

  • - Uninterruptible power supplies - Solar converters - Welding converters - Mid to high range switching frequency converters

Datasheet

📄 Open Download

Alternative Parts

Common IKW75N65EH5 alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541600000
USHTS8541600080
TARIC8541600000
TypeDetails
CAHTS8541600010
BRHTS85416010
INHTS85416000
MXHTS8541.60.01

Sourcing Information

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