IAUCN04S7N030ATMA1
Transistors (BJT/MOSFET)
Manufacturer
MPN
IAUCN04S7N030ATMA1
Product Type
Package / Case
TDSON-8
Datasheet
Key Attributes
MOSFET N-CH 40V 100A TDSON-8
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 40 V |
| Continuous Drain Current | 100 A |
| Chan Type | N-Channel |
| Pd W | 58 W |
| Output Capacitance(Coss) | 810pF |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Reverse Transfer Capacitance (Crss@Vds) | 36pF |
| Type | Description |
|---|---|
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.389nF |
| Operating Temperature | -55°C~+175°C |
| Rds On Ohm | 3.02mOhm@10V |
| Gate Charge C | 20nC@10V |
| Type | N-Channel |
| Package / Case | TDSON-8 |
Features
- OptiMOS™ power MOSFET for automotive applications
- N-channel – Enhancement mode – Normal Level
- Extended qualification beyond AEC-Q101
- Enhanced electrical testing
- Robust design
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- RoHS compliant
- 100% Avalanche tested
Applications
- General automotive applications.
Datasheet
Alternative Parts
Common IAUCN04S7N030ATMA1 alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
Need IAUCN04S7N030ATMA1 from Infineon Technologies for your next order? SZ Procure provides local sourcing support in Shenzhen — we help buyers check supplier availability, compare quotations, and coordinate procurement for China-sourced components.
For IAUCN04S7N030ATMA1, we can check current supplier availability, compare quotations from multiple sources, coordinate purchasing, and arrange pre-shipment inspection and shipment consolidation according to your requirements.
Need IAUCN04S7N030ATMA1? Send us your required quantity and specifications for a sourcing check and quotation.