HMC349AMS8GETR
RF & Wireless (Chips & Antennas)
Technical Specifications
| Type | Description |
|---|---|
| Frequency Range | 0Hz~4GHz |
| P1Db | 34dBm |
| Operating Temperature | -40°C~+85°C |
| Type | Description |
|---|---|
| Features | Integrated control logic;Integrated impedance matching network |
| Supply Voltage | 5 V |
| Package / Case | MSOP-8-EP |
Product Introduction
The HMC349AMS8G is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (PHEMT), single-pole, double throw (SPDT) switch specified from 100 MHz to 4 GHz.
The HMC349AMS8G is well suited for cellular infrastructure applications by yielding high isolation of 57 dB, low insertion loss of 0.9 dB, high input IP3 of 52 dBm, and high input P1dB of 34 dBm.
The HMC349AMS8G operates with a single positive supply voltage from 3 V to 5 V and provides a CMOS-/TTL-compatible control interface.
The HMC349AMS8G comes in an 8-lead mini small outline package with an exposed pad.
Features
- Nonreflective, 50 Ω design
- High isolation: 57 dB to 2 GHz
- Low insertion loss: 0.9 dB to 2 GHz
- High input linearity 1 dB power compression (P1dB): 34 dBm typical Third-order intercept (IP3): 52 dBm typical
- High power handling 33.5 dBm through path 26.5 dBm terminated path
- Single positive supply: 3 V to 5 V
- CMOS-/TTL-compatible control
- All off state control
- 8-lead mini small outline package with exposed pad (MINI_SO_EP)
Applications
- Cellular/4G infrastructure
- Wireless infrastructure
- Mobile radios
- Test equipment
Datasheet
Alternative Parts
Common HMC349AMS8GETR alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS |
| ECCN | EAR99 |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| Type | Details |
|---|---|
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |
Sourcing Information
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