GD25Q256EWIGR
Memory
Manufacturer
GigaDevice Semicon BeijingAsian Brands
MPN
GD25Q256EWIGR
Product Type
Maximum Clock Speed
133 MHz
Package / Case
WSON-8-EP
Datasheet
Key Attributes
IC FLASH 256Mbit SPI WSON-8-EP(5x6)
Technical Specifications
| Type | Description |
|---|---|
| Maximum Clock Speed | 133 MHz |
| Memory Size | 256Mbit |
| Operating Temp | -40°C ~ +85°C |
| Features | - |
| Type | Description |
|---|---|
| Working Voltage V | 3.15 V |
| Interface | SPI |
| Package / Case | WSON-8-EP |
Product Introduction
FLASH - NOR Memory IC 256Mbit SPI WSON-8-EP(5x6)
Features
- Power Supply Voltage: 2.7V~3.6V
- High Speed Clock Frequency: Up to 120MHz for fast read with 30pF load; Quad I/O Data transfer up to 480Mbit/s
- Flexible Memory Architecture: 2048Byte page for read and program; 128KByte per block for erase
- Enhanced Access Performance: 2KByte cache for fast random read; Cache Read and Cache Program
- Advanced Feature for SPI NAND: Internal ECC algorithm; Internal data move by page with ECC; Promised good block - 0 with ECC
- Power Supply Voltage: 1.7V~2.0V
- High Speed Clock Frequency: Up to 120MHz for fast read with 30pF load; Quad I/O Data transfer up to 480Mbit/s
- Flexible Memory Architecture: 2048Byte page for read and program; 128KByte per block for erase
- Enhanced Access Performance: 2KByte cache for fast random read; Cache Read and Cache Program
- Advanced Feature for SPI NAND: Internal ECC algorithm; Internal data move by page with ECC; Promised good block - 0 with ECC
Datasheet
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Sourcing Information
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