GigaDevice Semicon Beijing

GD25Q16ESIGR

Memory

Manufacturer
MPN
GD25Q16ESIGR
Product Type
Maximum Clock Speed
133 MHz
Package / Case
SOP-8-208mil
Key Attributes
Dual and Quad Serial Flash

Technical Specifications

TypeDescription
Maximum Clock Speed133 MHz
Memory Size16Mbit
Program / Erase Cycles100,000 cycles
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)150ms@(32KB)
Write Cycle Time(tWC)-
Page Programming Time (Tpp)400us
TypeDescription
Standby Supply Current11uA
Operating Temp-
FeaturesWrite enable latch;Hardware write protection;Software write protection;Absolute write protection
Working Voltage V3.15 V
InterfaceSPI
Package / CaseSOP-8-208mil

Product Introduction

The GD25Q16E (16M-bit) Serial flash supports the standard Serial Peripheral Interface (SPI), and the Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (WP#), I/O3 (HOLD#). The Dual I/O data is transferred with speed of 266Mbit/s, and the Quad I/O data is transferred with speed of 532Mbit/s.

Features

  • 16M-bit Serial Flash
  • 2048K-Byte
  • 256 Bytes per programmable page
  • Standard, Dual, Quad SPI
  • Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD#
  • Dual SPI: SCLK, CS#, IO0, IO1, WP#, HOLD#
  • Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3
  • High Speed Clock Frequency
  • 133MHz for fast read with 30PF load
  • Dual I/O Data transfer up to 266Mbits/s
  • Quad I/O Data transfer up to 532Mbits/s
  • Software/Hardware Write Protection
  • Write protect all/portion of memory via software
  • Enable/Disable protection with WP# Pin
  • Top/Bottom Block protection
  • Endurance and Data Retention
  • Minimum 100,000 Program/Erase Cycles
  • 20-year data retention typical
  • Allows XiP (eXecute in Place) Operation
  • High speed Read reduce overall XiP instruction fetch time
  • Continuous Read with Wrap further reduce data latency to fill up SoC cache
  • Fast Program/Erase Speed
  • Page Program time: 0.4ms typical
  • Sector Erase time: 45ms typical
  • Block Erase time: 0.15s/0.25s typical
  • Chip Erase time: 6s typical
  • Flexible Architecture
  • Uniform Sector of 4K-Byte
  • Uniform Block of 32/64K-Byte
  • Low Power Consumption
  • 11μA typical standby current
  • 1μA typical deep power down current
  • Advanced Security Features
  • 128-bit Unique ID for each device
  • Serial Flash Discoverable parameters (SFDP) register
  • 2x1024-Byte Security Registers With OTP Locks
  • Single Power Supply Voltage
  • Full voltage range: 2.7-3.6V
  • Package Information
  • SOP8 150mil
  • SOP8 208mil
  • USON8 (3x2mm, 0.45mm thickness)
  • USON8 (3x4mm)
  • USON8 (4x4mm, 0.45mm thickness)
  • WSON8 (6x5mm)

Datasheet

📄 Open Download

Alternative Parts

Common GD25Q16ESIGR alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8542329000
USHTS8542320071
TARIC8542329000
TypeDetails
CAHTS8542330000
BRHTS85423299
INHTS85423200
MXHTS8542.32.99

Sourcing Information

Need GD25Q16ESIGR from GigaDevice Semicon Beijing for your next order? SZ Procure provides local sourcing support in Shenzhen — we help buyers check supplier availability, compare quotations, and coordinate procurement for China-sourced components.

When you need GD25Q16ESIGR, SZ Procure can look into supplier options, confirm current availability, compare sourcing quotes and handle purchasing, pre-shipment inspection and consolidated shipment from Shenzhen. Before ordering, the listed specification(s) — Memory Size 16Mbit — can be confirmed with the supplier against the actual part.

Need GD25Q16ESIGR? Send us your required quantity and specifications for a sourcing check and quotation.