GD25Q128ESIG
Memory
Technical Specifications
| Type | Description |
|---|---|
| Maximum Clock Speed | 133 MHz |
| Memory Size | 128Mbit |
| Program / Erase Cycles | 100,000 cycles |
| Data Retention - TDR (Year) | 20 Years |
| Block Erase Time(tBE) | - |
| Write Cycle Time(tWC) | - |
| Page Programming Time (Tpp) | 500us |
| Type | Description |
|---|---|
| Standby Supply Current | 14uA |
| Operating Temp | - |
| Features | Write enable latch;Hardware write protection;Software write protection;Absolute write protection |
| Working Voltage V | 3.15 V |
| Interface | SPI |
| Package / Case | SOP-8-208mil |
Product Introduction
The GD25Q128E (128M-bit) Serial flash supports the standard Serial Peripheral Interface (SPI), and the Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (WP#), I/O3 (HOLD#/RESET#). The Dual I/O data is transferred with speed of 266Mbit/s, and the Quad I/O data is transferred with speed of 532Mbit/s.
Features
- 128M-bit Serial Flash
- 16M-Byte
- 256 Bytes per programmable page
- Standard, Dual, Quad SPI
- Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD#, RESET#
- Dual SPI: SCLK, CS#, IO0, IO1, WP#, HOLD#, RESET#
- Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3, RESET#
- Fast Program/Erase Speed
- Page Program time: 0.5ms typical
- Sector Erase time: 45ms typical
- Block Erase time: 0.15s/0.25s typical
- Chip Erase time: 50s typical
- Flexible Architecture
- Uniform Sector of 4K-Byte
- Uniform Block of 32/64K-Byte
- High Speed Clock Frequency
- 133MHz for fast read with 30PF load
- Dual I/O Data transfer up to 266Mbits/s
- Quad I/O Data transfer up to 532Mbits/s
- Low Power Consumption
- 14μA typical standby current
- 1μA typical deep power down current
- Software/Hardware Write Protection
- Write protect all/portion of memory via software
- Enable/Disable protection with WP# Pin
- Top/Bottom Block protection
- Advanced Security Features
- 128-bit Unique ID for each device
- Serial Flash Discoverable parameters (SFDP) register
- 3x1024-Byte Security Registers With OTP Locks
- Endurance and Data Retention
- Minimum 100,000 Program/Erase Cycles
- 20-year data retention typical
- Allows XiP (eXecute in Place) Operation
- High speed Read reduce overall XiP instruction fetch time
- Continuous Read with Wrap further reduce data latency to fill up SoC cache
- Single Power Supply Voltage
- Full voltage range: 2.7-3.6V
- Package Information
- SOP8 208mil
- SOP16 300mil
- USON8 (4x4mm, 0.45mm thickness)
- WSON8 (6x5mm)
- WSON8 (8x6mm)
- TFBGA-24ball (6x4 Ball Array)
- TFBGA-24ball (5x5 Ball Array)
Datasheet
Alternative Parts
Common GD25Q128ESIG alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Sourcing Information
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