FS50R12W1T7_B11
Transistors (BJT/MOSFET)
Manufacturer
MPN
FS50R12W1T7_B11
Product Type
Datasheet
Key Attributes
IGBT Type: IGBT Module
Collector-Emitter Breakdown Voltage (Vces): 1.2kV
Current - Collector(Ic): 50A
Collector-Emitter Breakdown Voltage (Vces): 1.2kV
Current - Collector(Ic): 50A
Technical Specifications
| Type | Description |
|---|---|
| Pd W | - |
| Gate Charge C | 920nC@600V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -40°C~+175°C |
| Td(Off) | 270ns |
| Td(On) | 45ns |
| Current - Collector(Ic) | 50A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Cres) | 39pF |
| IGBT Type | IGBT Module |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.15V@1.28mA |
| Vce Saturation(VCE(sat)) | 1.5V@50A,15V |
| Switching Energy(Eoff) | 3.35mJ |
| Turn-On Energy (Eon) | 4.44mJ |
| Input Capacitance(Cies) | 11.1nF |
| Output Capacitance(Coes) | - |
Datasheet
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Sourcing Information
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