FS200R12KT4R
Transistors (BJT/MOSFET)
Manufacturer
MPN
FS200R12KT4R
Product Type
Datasheet
Key Attributes
IGBT Type: IGBT Module
Pd - Power Dissipation: 1kW
Collector-Emitter Breakdown Voltage (Vces): 1.2kV
Current - Collector(Ic): 280A
Pd - Power Dissipation: 1kW
Collector-Emitter Breakdown Voltage (Vces): 1.2kV
Current - Collector(Ic): 280A
Technical Specifications
| Type | Description |
|---|---|
| Pd W | 1000 W |
| Gate Charge C | 1.65uC@15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -40°C~+150°C |
| Td(Off) | 320ns |
| Td(On) | 140ns |
| Current - Collector(Ic) | 280A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Cres) | 500pF |
| IGBT Type | IGBT Module |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@7.6mA |
| Vce Saturation(VCE(sat)) | 1.75V |
| Switching Energy(Eoff) | 11mJ |
| Turn-On Energy (Eon) | 10.5mJ |
| Input Capacitance(Cies) | 14nF |
| Output Capacitance(Coes) | - |
Datasheet
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Sourcing Information
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