FP35R12W2T7BPSA1
Transistors (BJT/MOSFET)
Manufacturer
MPN
FP35R12W2T7BPSA1
Product Type
Datasheet
Key Attributes
IGBT Type: FS (Field Stop)
Pd - Power Dissipation: 20mW
Collector-Emitter Breakdown Voltage (Vces): 1.2kV
Current - Collector(Ic): 35A
Pd - Power Dissipation: 20mW
Collector-Emitter Breakdown Voltage (Vces): 1.2kV
Current - Collector(Ic): 35A
Technical Specifications
| Type | Description |
|---|---|
| Pd W | 0.02 W |
| Gate Charge C | 548nC@600V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -40°C~+175°C@(Tj) |
| Td(Off) | 260ns;320ns;340ns;250ns;310ns;330ns |
| Td(On) | 37ns;43ns;44ns;35ns;41ns |
| Current - Collector(Ic) | 35A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Cres) | 23pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Vce Saturation(VCE(sat)) | 1.6V;1.74V;1.82V |
| Switching Energy(Eoff) | 2.39mJ;3.73mJ;4.56mJ;2.41mJ;3.74mJ;4.58mJ |
| Turn-On Energy (Eon) | 2.62mJ;3.73mJ;4.45mJ;2.53mJ;3.47mJ;4.21mJ |
| Input Capacitance(Cies) | 6.62nF@25V |
| Output Capacitance(Coes) | - |
Features
- Low VCEsat
- TRENCHSTOP IGBT7 technology
- Overload operating temperature up to 175°C
- 2.5kV AC 1-minute isolation withstand voltage
- Low thermal resistance Al₂O₃ substrate
- High power density
- Compact design
- Solder connection technology
Applications
- Auxiliary inverter
- Air conditioning
- Motor drive
Datasheet
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Sourcing Information
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