FP35R12W2T7_B11
Transistors (BJT/MOSFET)
Manufacturer
MPN
FP35R12W2T7_B11
Product Type
Package / Case
Through Hole,62.8x56.7mm
Datasheet
Key Attributes
EasyPIM Modul mit TRENCHSTOP IGBT7 und Emitter Controlled 7 Diode und PressFIT/NTC
Technical Specifications
| Type | Description |
|---|---|
| Pd W | - |
| Gate Charge C | 548nC@600V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -40°C~+175°C |
| Td(Off) | 260ns |
| Td(On) | 37ns |
| Current - Collector(Ic) | 35A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 23pF |
| Type | Description |
|---|---|
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.15V@0.75mA |
| Vce Saturation(VCE(sat)) | 1.6V@35A,15V |
| Switching Energy(Eoff) | 2.39mJ |
| Turn-On Energy (Eon) | 2.62mJ |
| Input Capacitance(Cies) | 6.62nF |
| Output Capacitance(Coes) | - |
| Package / Case | Through Hole,62.8x56.7mm |
Features
- Low VCEsat
- TrenchstopTM IGBT7
- Overload operation up to 175℃
- 2.5 kV AC 1min insulation
- Al₂O₃ substrate with low thermal resistance
- High power density
- Compact design
- PressFIT contact technology
Applications
- Auxiliary inverters
- Air conditioning
- Motor drives
Datasheet
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Sourcing Information
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