FP25R12W2T4
IGBT Modules
Manufacturer
MPN
FP25R12W2T4
Product Type
Package / Case
Through Hole,62.8x56.7mm
Datasheet
Technical Specifications
| Type | Description |
|---|---|
| Pd W | 175 W |
| Gate Charge C | 200.0 |
| Trr Ns | - |
| Operating Temp | -40°C ~ +150°C |
| Td(Off) | 190ns |
| Td(On) | 26ns |
| Current - Collector(Ic) | 39A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 50pF |
| Type | Description |
|---|---|
| IGBT Type | IGBT Module |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@0.8mA |
| Vce Saturation(VCE(sat)) | 2.25V@25A,15V |
| Switching Energy(Eoff) | 1.45mJ |
| Turn-On Energy (Eon) | 1.6mJ |
| Input Capacitance(Cies) | 1.45nF |
| Output Capacitance(Coes) | - |
| Package / Case | Through Hole,62.8x56.7mm |
Product Introduction
175W 39A 1.2kV IGBT Module Through Hole,62.8x56.7mm IGBT Modules RoHS
Datasheet
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Sourcing Information
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