Infineon Technologies

FP15R12W1T4

Transistors (BJT/MOSFET)

MPN
FP15R12W1T4
Key Attributes
IGBT Type: FS (Field Stop)
Pd - Power Dissipation: 130W
Collector-Emitter Breakdown Voltage (Vces): 1.2kV
Current - Collector(Ic): 15A

Technical Specifications

TypeDescription
Pd W130 W
Gate Charge C120 nC
Reverse Recovery Time (trr)-
Operating Temperature-40°C~+150°C
Td(Off)195ns;280ns
Td(On)55ns
Current - Collector(Ic)15A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
TypeDescription
Reverse Transfer Capacitance (Cres)30pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.2V;6.4V
Vce Saturation(VCE(sat))1.85V;2.25V
Switching Energy(Eoff)830uJ;1.35mJ
Turn-On Energy (Eon)1.3mJ;1.95mJ
Input Capacitance(Cies)890pF
Output Capacitance(Coes)-

Datasheet

📄 Open Download

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541600000
USHTS8541600080
TARIC8541600000
TypeDetails
CAHTS8541600010
BRHTS85416010
INHTS85416000
MXHTS8541.60.01

Sourcing Information

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