Infineon Technologies

FP150R12KT4

Transistors (BJT/MOSFET)

MPN
FP150R12KT4
Package / Case
Through Hole
Key Attributes
IGBT Type: FS (Field Stop)
Collector-Emitter Breakdown Voltage (Vces): 1.2kV
Current - Collector(Ic): 150A

Technical Specifications

TypeDescription
Pd W-
Gate Charge C1.2uC@30V
Reverse Recovery Time (trr)-
Operating Temperature-40°C~+150°C
Td(Off)420ns
Td(On)160ns
Current - Collector(Ic)150A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)410pF
TypeDescription
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.8V
Vce Saturation(VCE(sat))2.1V
Switching Energy(Eoff)9.8mJ
Turn-On Energy (Eon)22mJ
Input Capacitance(Cies)9.35nF
Output Capacitance(Coes)-
Package / CaseThrough Hole

Datasheet

📄 Open Download

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541600000
USHTS8541600080
TARIC8541600000
TypeDetails
CAHTS8541600010
BRHTS85416010
INHTS85416000
MXHTS8541.60.01

Sourcing Information

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