FM24W256-GTR

The FM24W256 is a 256- Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory of F- RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system- level reliability problems caused by EEPROM and other nonvolatile memories.

Unlike EEPROM, the FM24W256 performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. Also, F- RAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits. The FM24W256 is capable of supporting 10^14 read/write cycles, or 100 million times more write cycles than EEPROM.

These capabilities make the FM24W256 ideal for nonvolatile memory applications, requiring frequent or rapid writes. Examples range from data logging, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system.

The FM24W256 provides substantial benefits to users of serial (I²C) EEPROM as a hardware drop- in replacement. The device specifications are guaranteed over an industrial temperature range of - 40℃ to +85℃