FH8812
Transistors (BJT/MOSFET)
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 20 V |
| Continuous Drain Current | 8.2 A |
| Chan Type | N-Channel |
| Pd W | 1.25 W |
| Output Capacitance(Coss) | 188pF |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Reverse Transfer Capacitance (Crss@Vds) | 167pF |
| Type | Description |
|---|---|
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.15nF |
| Vgs | ±12V |
| Operating Temperature | -55°C~+150°C |
| Rds On Ohm | 15mOhm@2.5V |
| Gate Charge C | 12nC@4.5V |
| Type | N-Channel |
| Package / Case | SOT-23-3L |
Product Introduction
FH8812 adopts advanced trench technology to deliver excellent on-resistance RDS(ON), low gate charge, and high-density cell design for ultra-low on-resistance. The device is suitable for use as a load switch or in PWM applications.
Features
- VDS = 20 V, ID = 8.2 A
- RDS(ON) (typical) = 9.4 mΩ at VGS = 4.5 V
- RDS(ON) (typical) = 11 mΩ at VGS = 2.5 V
- High power and high current handling capability
- Lead-free
- Surface mount package
- Fast switching speed
Applications
- PWM applications
- Load switch
Datasheet
Alternative Parts
Common FH8812 alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| Type | Details |
|---|---|
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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