Infineon Technologies

FF75R12RT4

Transistors (BJT/MOSFET)

MPN
FF75R12RT4
Package / Case
Screw Terminals
Key Attributes
IGBT-Module 34mm Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode

Technical Specifications

TypeDescription
Pd W395 W
Operating Temperature-40°C~+150°C
Reverse Recovery Time (trr)-
Gate Charge C570 nC
Td(Off)300ns
Td(On)130ns
Current - Collector(Ic)75A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)250pF
TypeDescription
IGBT TypeIGBT Module
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.2V@2.4mA
Vce Saturation(VCE(sat))2.15V@75A,15V
Collector Cut-Off Current (Ices)-
Switching Energy(Eoff)4mJ
Turn-On Energy (Eon)6mJ
Input Capacitance(Cies)4.3nF
Output Capacitance(Coes)-
Package / CaseScrew Terminals

Applications

  • Hochleistungsumrichter
  • Motorantriebe
  • USV-Systeme
  • High Power Converters
  • Motor Drives
  • UPS Systems

Datasheet

📄 Open Download

Alternative Parts

Common FF75R12RT4 alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS
ECCNEAR99
CNHTS8541600000
USHTS8541600080
TARIC8541600000
TypeDetails
CAHTS8541600010
BRHTS85416010
INHTS85416000
MXHTS8541.60.01

Sourcing Information

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