FORESEE

F35SQB004G-WWT

Memory

Manufacturer
FORESEEAsian Brands
MPN
F35SQB004G-WWT
Product Type
Maximum Clock Speed
166 MHz
Package / Case
WSON-8(6x8)
Key Attributes
4Gbit SPI NAND Flash

Technical Specifications

TypeDescription
Maximum Clock Speed166 MHz
Memory Size4Gbit
Program / Erase Cycles60,000 Cycles
Data Retention - TDR (Year)10 years
Block Erase Time(tBE)2ms
Write Cycle Time(tWC)-
Page Programming Time (Tpp)350us
TypeDescription
Standby Supply Current10uA
Operating Temperature-40°C~+85°C
FeaturesRead buffer function;Copy back write function;Write enable latch;Software reset function;Hardware write protection function;Software write protection function;ECC error correction function;OTP region write protection and lock function
Supply Voltage2.7V~3.6V
InterfaceSPI
Package / CaseWSON-8(6x8)

Product Introduction

This device is a 4Gb (512M×8-bit) serial NAND flash memory, operating from a single 3.3V VCC supply. It supports standard SPI, Dual/Quad SPI: serial clock, chip select, serial data SIO0 (DI), SIO1 (DO), SIO2 (WP#), and SIO3 (HOLD#). SPI clock frequency up to 166 MHz is supported. Supports JEDEC standard manufacturer and device ID, ID, one parameter page, and 62 OTP pages. On-chip 8-bit ECC logic is provided with default enabled, and can be disabled or enabled via commands.

Features

  • Supply voltage: 2.7V~3.6V
  • Organization with internal ECC disabled: Memory cell array: (512M + 32M) bytes; Page size: (4k + 256) bytes; Block size: 64 pages, (256k + 16k) bytes
  • Organization with internal ECC enabled: Memory cell array: (512M + 16M) bytes; Page size: (4k + 128) bytes; Block size: 64 pages, (256k + 8k) bytes
  • Serial interface: Standard SPI: CLK, CS#, DI, DO, WP#, HOLD#; Dual SPI: CLK, CS#, SIO0-SIO1, WP#, HOLD#; Quad SPI: CLK, CS#, SIO0-SIO3
  • High performance: 166 MHz standard/dual/quad SPI clock; Page program time: 350μs (typical); Block erase time: 2ms (typical)
  • Low power consumption: Standby current: 10μA (typical); Page read current: 10mA (typical); Program/erase current: 15mA (typical)
  • Advanced features: On-chip 8-bit ECC for memory array; Software and hardware write protection; ID; One 4kB parameter page; Sixty-two 4kB OTP pages; Guaranteed initial good block 0
  • High reliability: Endurance: 60k cycles (typical); Data retention: 10 years

Datasheet

📄 Open Download

Compliance & Export Codes

TypeDetails
RoHSROHS
CNHTS8542329000
USHTS8542320071
TARIC8542329000
TypeDetails
CAHTS8542330000
BRHTS85423299
INHTS85423200
MXHTS8542.32.99

Sourcing Information

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