F35SQB002G-WWT
Memory
Voltage - Supply: 2.7V~3.6V
Memory Size: 2Gbit
Clock Frequency: 166MHz
Technical Specifications
| Type | Description |
|---|---|
| Maximum Clock Speed | 166 MHz |
| Memory Size | 2Gbit |
| Program / Erase Cycles | 100,000 cycles |
| Data Retention - TDR (Year) | - |
| Block Erase Time(tBE) | - |
| Write Cycle Time(tWC) | - |
| Page Programming Time (Tpp) | - |
| Type | Description |
|---|---|
| Standby Supply Current | 10uA |
| Operating Temperature | -40°C~+85°C |
| Features | Read buffer function;Copy back write function;Write enable latch;Software reset function;Hardware write protection function;Software write protection function;ECC error correction function;OTP region write protection and lock function |
| Supply Voltage | 2.7V~3.6V |
| Interface | SPI |
| Package / Case | WSON-8(6x8) |
Product Introduction
F35SQB002G is a 2Gb (256M×8-bit) serial NAND Flash memory operating at a single 3.3V VCC supply. The device supports standard SPI, Dual/Quad SPI: serial clock, chip select, serial data SIO0 (data input), SIO1 (data output), SIO2 (write protect), and SIO3 (hold). F35SQB002G supports JEDEC-standard manufacturer and device ID, ID, one parameter page, and 62 OTP pages. The device integrates an on-chip 8-bit ECC engine, enabled by default. The internal ECC can be disabled or enabled via commands.
Features
- Power supply: VCC: 2.7V ~ 3.6V
- Organization (internal ECC off): Memory cell array: (256M + 16M) bytes; Page size: (2k + 128) bytes; Block size: 64 pages, (128k + 8k) bytes
- Organization (internal ECC on): Memory cell array: (256M + 8M) bytes; Page size: (2k + 64) bytes; Block size: 64 pages, (128k + 4k) bytes
- Serial interface: Standard SPI: CLK, CS#, DI, DO, WP#, HOLD#; Dual SPI: CLK, CS#, SIO0-SIO1, WP#, HOLD#; Quad SPI: CLK, CS#, SIO0-SIO3
- High performance: 166 MHz Standard/Dual/Quad SPI clock; 83 MHz DTR read SPI clock; Page program time: 400 μs (typical); Block erase time: 3ms (typical)
- Low power consumption: Standby: 10 μA (typical); Page read: 10mA (typical); Program/Erase: 15 mA (typical)
- Advanced features: On-chip 8-bit ECC for memory array; Software and hardware write protection; ID; One 2kB parameter page; Sixty-two 2kB OTP pages; Guaranteed good block 0
- High reliability: Endurance: up to 100k cycles; Data retention: 10 years
Datasheet
Compliance & Export Codes
| Type | Details |
|---|---|
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| Type | Details |
|---|---|
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Sourcing Information
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