EL357C
Transistor, Photovoltaic Output Optoisolators
Technical Specifications
| Type | Description |
|---|---|
| Fall time | 3us |
| Rise time | 4us |
| Vce Saturation(VCE(sat)) | 100mV@20mA,1mA |
| Load Voltage | 80V |
| Reverse Voltage | - |
| Current transfer ratio | 200%;400% |
| Voltage - Forward(Vf) | 1.2V |
| Forward Current(If) | 50mA |
| Type | Description |
|---|---|
| Input type | DC |
| Output Current | 0.05 A |
| Operating Temp | -55°C ~ +110°C |
| Channels | 1.0 |
| Output Type | Phototransistor |
| Isolation Vrms V | 3.75 V |
| Features | - |
| Package / Case | SOP-4 |
Product Introduction
The EL357 is a photocoupler in a compact SMT package, designed for surface mount production processes. The device consists of a GaAs infrared LED and a phototransistor. Its package footprint is smaller than conventional DIP packages, making it suitable for high-density SMT applications such as programmable controllers.
Features
- Current Transfer Ratio range: 80 ~ 600% (IF = 5mA, VCE = 5V)
- Input-output isolation voltage: 3750 Vrms
- Collector-emitter breakdown voltage BVCEO ≥ 80 V
- Operating temperature range: -55 ~ 110℃
Datasheet
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541490000 |
| USHTS | 8541491010 |
| TARIC | 8541490000 |
| Type | Details |
|---|---|
| CAHTS | 8541490090 |
| BRHTS | 85414900 |
| INHTS | 85414900 |
| MXHTS | 8541.40.02 |
Sourcing Information
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