TWGMC

DTC143EE

Transistors (BJT/MOSFET)

Manufacturer
TWGMCAsian Brands
MPN
DTC143EE
Package / Case
SOT-523
Key Attributes
NPN Silicon Epitaxial Planar Digital Transistor

Technical Specifications

TypeDescription
Current - Collector Cutoff-
Collector - Emitter Voltage VCEO-
Transition frequency(fT)250MHz
Emitter-Base Voltage VEBO-
DC Current Gain20
Vce Saturation(VCE(sat))-
Current - Collector(Ic)100mA
Output Voltage(VO(on))300mV@10mA,500uA
Input Resistor6.11kOhm
TypeDescription
Resistor Ratio1.2
Input Voltage (VI(on)@Ic,Vce)3V@20mA,300mV
Voltage - Input(Max)(VI(off))500mV@100uA,5V
Operating Temperature-
Number1 NPN (Pre-Biased)
TypeNPN
Pd W0.2 W
Package / CaseSOT-523

Features

  • Built-in bias resistors enable inverter circuit configuration without external input resistors (see equivalent circuit)
  • Bias resistors consist of fully isolated thin-film resistors, allowing negative bias input. They also offer the advantage of nearly eliminating parasitic effects
  • Only on/off state setting required during operation, simplifying device design

Datasheet

📄 Open Download

Compliance & Export Codes

TypeDetails
RoHSROHS
CNHTS8541600000
USHTS8541600080
TARIC8541600000
TypeDetails
CAHTS8541600010
BRHTS85416010
INHTS85416000
MXHTS8541.60.01

Sourcing Information

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