TWGMC

DTA143EE

Transistors (BJT/MOSFET)

Manufacturer
TWGMCAsian Brands
MPN
DTA143EE
Package / Case
SOT-523
Key Attributes
PNP Silicon Epitaxial Planar Digital Transistor

Technical Specifications

TypeDescription
Current - Collector Cutoff-
Collector - Emitter Voltage VCEO50V
Transition frequency(fT)250MHz
Emitter-Base Voltage VEBO-
DC Current Gain30
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))300mV
Output Voltage(VO(on))300mV
Input Resistor4.7kOhm
TypeDescription
Resistor Ratio1
Voltage - Input(Max)(VI(off))500mV@100uA,5V
Input Voltage (VI(on)@Ic,Vce)3V@20mA,300mV
Operating Temperature-
Number1 PNP Pre-Biased
TypePNP
Pd W0.15 W
Package / CaseSOT-523

Features

  • Built-in bias resistors enable inverter circuit configuration without external input resistors (see equivalent circuit)
  • Bias resistors consist of fully isolated thin-film resistors, allowing positive biasing of inputs; they also offer the advantage of nearly eliminating parasitic effects
  • Operation requires only setting the ON/OFF state, simplifying device design

Datasheet

📄 Open Download

Compliance & Export Codes

TypeDetails
RoHSROHS
CNHTS8541600000
USHTS8541600080
TARIC8541600000
TypeDetails
CAHTS8541600010
BRHTS85416010
INHTS85416000
MXHTS8541.60.01

Sourcing Information

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