Diodes Incorporated

DRDNB16W-7

Transistors (BJT/MOSFET)

MPN
DRDNB16W-7
Package / Case
SOT-363
Key Attributes
TRANS PREBIAS 18V SOT-363

Technical Specifications

TypeDescription
Current - Collector Cutoff-
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO-
DC Current Gain56
Vce Saturation(VCE(sat))300mV
Current - Collector(Ic)600mA
Output Voltage(VO(on))300mV
Input Resistor1kOhm
TypeDescription
Resistor Ratio-
Input Voltage (VI(on)@Ic,Vce)2V@20mA,0.3V
Voltage - Input(Max)(VI(off))300mV@100uA,5V
Operating Temperature-55°C~+150°C
TypeNPN
Number1 NPN (Pre-Biased)
Pd W0.2 W
Package / CaseSOT-363

Features

  • Epitaxial Planar Die Construction
  • One Transistor and One Switching Diode in One Package
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device

Datasheet

📄 Open Download

Compliance & Export Codes

TypeDetails
RoHSROHS
ECCNEAR99
CNHTS8541600000
USHTS8541600080
TARIC8541600000
TypeDetails
CAHTS8541600010
BRHTS85416010
INHTS85416000
MXHTS8541.60.01

Sourcing Information

Looking for a reliable source for DRDNB16W-7 from Diodes Incorporated? SZ Procure is a China electronics sourcing partner, helping international buyers source components through our supplier network in Shenzhen.

When you need DRDNB16W-7, SZ Procure can look into supplier options, confirm current availability, compare sourcing quotes and handle purchasing, pre-shipment inspection and consolidated shipment from Shenzhen.

Need DRDNB16W-7? Send us your required quantity and specifications for a sourcing check and quotation.