DON60N12T
Transistors (BJT/MOSFET)
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 120 V |
| Continuous Drain Current | 60 A |
| Chan Type | N-Channel |
| Pd W | 125 W |
| Output Capacitance(Coss) | 536pF |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| Type | Description |
|---|---|
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.2nF |
| Operating Temperature | -55°C~+150°C |
| Rds On Ohm | 10mOhm@10V |
| Gate Charge C | 25nC@10V |
| Type | N-Channel |
| Package / Case | DFN5x6-8 |
Product Introduction
This N-channel MOSFET utilizes advanced SGT technology and design to achieve excellent RDS(ON) at low gate charge. It is suitable for a wide range of applications.
Features
- VDS = 120 V, ID = 60 A, RDS(ON) < 13 mΩ (typical 10 mΩ at VGS = 10 V)
- Low gate charge
- RoHS-compliant devices available
- Advanced high cell-density trench technology for ultra-low RDS(ON)
- Excellent package thermal dissipation
- Moisture Sensitivity Level 3 (MSL3)
Datasheet
Alternative Parts
Common DON60N12T alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| Type | Details |
|---|---|
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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