DN2540N8-G
Single FETs, MOSFETs
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 400 V |
| Continuous Drain Current | 0.17 A |
| Chan Type | N-Channel |
| Pd W | 1.6 W |
| Rds On Ohm | 25 Ω |
| Gate Threshold Voltage (Vgs(th)) | - |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| Number | 1 N-channel |
| Type | Description |
|---|---|
| Input Capacitance(Ciss) | 300pF |
| Vgs | +/-20V |
| Operating Temp | - |
| Output Cap Coss | 3e-11 |
| Gate Charge C | - |
| Type | N-Channel |
| Package / Case | SOT-89 |
Product Introduction
The Supertex DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Features
- High input impedance
- Low input capacitance
- Fast switching speeds
- Low on-resistance
- Free from secondary breakdown
- Low input and output leakage
Applications
- - Normally-on switches - Solid state relays - Converters - Linear amplifiers - Constant current sources - Power supply circuits - Telecom
Datasheet
Alternative Parts
Common DN2540N8-G alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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