Texas Instruments

CSD88537ND

Transistors (BJT/MOSFET)

Manufacturer
MPN
CSD88537ND
Package / Case
SOIC-8
Key Attributes
MOSFET N-CH ARR 60V 16A SOIC-8

Technical Specifications

TypeDescription
Drain-Source Voltage60 V
Continuous Drain Current16 A
Chan TypeN-Channel
Pd W2.1 W
Reverse Transfer Capacitance (Crss)5.2pF
Ciss-Input Capacitance1.4nF
Output Capacitance(Coss)133pF
ConfigurationHalf-Bridge
TypeDescription
Number2 N-Channel
Vgs±20V
Gate Threshold Voltage (Vgs(th))3.6V
Operating Temperature-55°C~+150°C
Rds On Ohm19mOhm@6V
TypeN-Channel
Gate Charge C14nC@10V
Package / CaseSOIC-8

Product Introduction

This dual SO-8, 60V, 12.5mΩ NexFET power MOSFET is designed for use as a half-bridge in low-current motor control applications.

Features

  • Ultra-low Qg and Qgd
  • Avalanche-rated
  • Lead-free
  • RoHS compliant
  • Halogen-free

Applications

  • Half-bridge synchronous buck converter for motor control

Datasheet

📄 Open Download

Alternative Parts

Common CSD88537ND alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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