CSD17585F5
Transistors (BJT/MOSFET)
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 30 V |
| Continuous Drain Current | 5.9 A |
| Chan Type | N-Channel |
| Pd W | 1.4 W |
| Output Capacitance(Coss) | 7.4pF |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Reverse Transfer Capacitance (Crss@Vds) | 34pF |
| Type | Description |
|---|---|
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 380pF |
| Vgs | 20V |
| Operating Temperature | -55°C~+150°C |
| Rds On Ohm | 33mOhm@4.5V |
| Gate Charge C | 5.1nC@10V |
| Type | N-Channel |
| Package / Case | PicoStar-3 |
Product Introduction
This 30-V, 22-mΩ, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.
Features
- Low-On Resistance
- Ultra-Low Qg and Qgd
- Ultra-Small Footprint
- – 1.53 mm×0.77 mm
- Low Profile
- – 0.35-mm Height
- Integrated ESD Protection Diode Rated > 4-kV HBM Rated >2-kV CDM
- Lead and Halogen Free
- RoHS Compliant
Applications
- Optimized for Industrial Load Switch Applications
- Optimized for General Purpose Switching Applications
Datasheet
Alternative Parts
Common CSD17585F5 alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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