CSD17484F4
Transistors (BJT/MOSFET)
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 30 V |
| Continuous Drain Current | 3 A |
| Chan Type | N-Channel |
| Pd W | 0.5 W |
| Output Capacitance(Coss) | 57pF |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Reverse Transfer Capacitance (Crss@Vds) | 2.9pF |
| Type | Description |
|---|---|
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 195pF |
| Vgs | 12V |
| Operating Temperature | -55°C~+150°C |
| Rds On Ohm | 270mOhm@1.8V |
| Gate Charge C | 2.04nC@8V |
| Type | N-Channel |
| Package / Case | PicoStar-3 |
Product Introduction
This 99 mΩ, 30V N-channel FemtoFET MOSFET is designed and optimized to minimize space occupied in many handheld and mobile applications. This technology reduces package size by at least 60% while replacing standard small-signal MOSFETs.
Features
- Low on-resistance
- Ultra-low Qg and Qgd
- Low threshold voltage
- Ultra-compact package (0402 case size)
- Ultra-thin package (0.2 mm thickness)
- Integrated ESD protection diode
- Rated >4 kV HBM
- Rated >2 kV CDM
- Lead-free and halogen-free
- RoHS compliant
Applications
- Optimized for load switch applications
- Optimized for general-purpose switch applications
- Battery applications
- Handheld and mobile applications
Datasheet
Alternative Parts
Common CSD17484F4 alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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