Nexperia

BUK9Y59-60E,115

Single FETs, MOSFETs

Manufacturer
MPN
BUK9Y59-60E,115
Package / Case
LFPAK56
Key Attributes
MOSFET N-CH 60V 16.7A LFPAK56(PowerSO-8)

Technical Specifications

TypeDescription
Drain-Source Voltage60 V
Continuous Drain Current16.7 A
Chan TypeN-Channel
Pd W37 W
Rds On Ohm0.059 Ω
Gate Charge C6.1
Configuration-
Gate Threshold Voltage (Vgs(th))1.7V
TypeDescription
Reverse Transfer Capacitance (Crss@Vds)56pF
Number1 N-channel
Input Capacitance(Ciss)715pF
Vgs+/-10V
Output Cap Coss6.6e-11
Operating Temp-55°C ~ +175°C
TypeN-Channel
Package / CaseLFPAK56

Product Introduction

Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

Features

  • Q101 compliant
  • Repetitive avalanche rated
  • Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C

Applications

  • - 12 V Automotive systems - Motors, lamps and solenoid control - Transmission control - Ultra high performance power switching

Datasheet

📄 Open Download

Alternative Parts

Common BUK9Y59-60E,115 alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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