BUK9Y15-60E,115
Single FETs, MOSFETs
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 60 V |
| Continuous Drain Current | 53 A |
| Chan Type | N-Channel |
| Pd W | 95 W |
| Rds On Ohm | 0.011 Ω |
| Gate Charge C | 17.2 |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 137pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.603nF |
| Vgs | +/-10V |
| Output Cap Coss | 1.82e-10 |
| Operating Temp | -55°C ~ +175°C |
| Type | N-Channel |
| Package / Case | SOT-669 |
Product Introduction
Logic-level N-channel MOSFET using TrenchMOS technology in an LFPAK56 (Power SO8) package. This product has been designed and qualified to the AEC Q101 standard for high-performance automotive applications.
Features
- Q101 compliant
- Repetitive avalanche rated
- 175°C temperature rating for high thermal demand environments
- True logic-level gate with VGS(th) rated above 0.5 V at 175°C
Applications
- - 12 V automotive systems - Motor, lamp, and solenoid control - Transmission control - Ultra-high-performance power switching
Datasheet
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Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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