BUK7K6R8-40E,115
FET, MOSFET Arrays
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 40 V |
| Continuous Drain Current | 40 A |
| Chan Type | N-Channel |
| Pd W | 64 W |
| Rds On Ohm | 0.007 Ω |
| Gate Charge C | 9.1 |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 197pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.46nF |
| Type | N-Channel |
| Output Cap Coss | 3.24e-10 |
| Package / Case | LFPAK56D |
Product Introduction
Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Features
- Dual MOSFET Q101 compliant
- Repetitive avalanche rated
- Suitable for thermally demanding environments due to 175 ℃ rating
- True standard level gate with VGS(th) of greater than 1V at 175 ℃
Applications
- - 12 V Automotive systems - Motors, lamps and solenoid control - Transmission control - Ultra high performance power switching
Datasheet
Alternative Parts
Common BUK7K6R8-40E,115 alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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